Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs
Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile ch...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4892609 |