Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs
Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile ch...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4892609 |
| _version_ | 1818198605350043648 |
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| author | W. Deng X. Ma J. Huang |
| author_facet | W. Deng X. Ma J. Huang |
| author_sort | W. Deng |
| collection | DOAJ |
| description | Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions. |
| first_indexed | 2024-12-12T02:08:32Z |
| format | Article |
| id | doaj.art-b4bd6cc890ea4b68b0c698faac03972d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-12T02:08:32Z |
| publishDate | 2014-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b4bd6cc890ea4b68b0c698faac03972d2022-12-22T00:41:59ZengAIP Publishing LLCAIP Advances2158-32262014-08-0148087107087107-1210.1063/1.4892609004408ADVSurface potential calculation and drain current model for junctionless double-gate polysilicon TFTsW. Deng0X. Ma1J. Huang2Department of Electronic Engineering, Jinan University, Guangzhou 510630, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510630, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510630, ChinaSurface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions.http://dx.doi.org/10.1063/1.4892609 |
| spellingShingle | W. Deng X. Ma J. Huang Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs AIP Advances |
| title | Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs |
| title_full | Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs |
| title_fullStr | Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs |
| title_full_unstemmed | Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs |
| title_short | Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs |
| title_sort | surface potential calculation and drain current model for junctionless double gate polysilicon tfts |
| url | http://dx.doi.org/10.1063/1.4892609 |
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