The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly insulating buffer resulted in Fe segregation and 3D...

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Bibliographic Details
Main Authors: Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
GaN power HEMT
MOCVD
Fe doping
nano-mask
3D growth
diffusion
Online Access:https://www.mdpi.com/1996-1944/15/6/2058

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https://www.mdpi.com/1996-1944/15/6/2058

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