External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET
Gate configuration phase transition fully depleted silicon-on-insulator (FDSOI) metal- oxide-semiconductor field-effect transistor (MOSFET) without an external resistor is proposed using Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PZT)-based threshold sel...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8584067/ |