Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications
In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOItechnologyand the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), isanalyzed. It is known [3,4] that the thermal conductivity of GaAs is 3-4 time...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2019-10-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3969 |