4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational...

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Bibliographic Details
Main Authors: Yanjuan Liu, Dezhen Jia, Junpeng Fang
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Micromachines
Subjects:
LDMOS
MOS channel diode
reverse recovery
Online Access:https://www.mdpi.com/2072-666X/14/5/950

Internet

https://www.mdpi.com/2072-666X/14/5/950

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