Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics...

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Bibliographic Details
Main Authors: Shiben Hu, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo, Jiantai Wang, Chao Pang, Zheng Gong, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Nanomaterials
Subjects:
oxide semiconductor
a-IGZO
TFT
X-ray reflectivity
microwave photoconductivity decay
Online Access:https://www.mdpi.com/2079-4991/11/2/522

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https://www.mdpi.com/2079-4991/11/2/522

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