Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics...
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| Format: | Article |
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MDPI AG
2021-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/2/522 |
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| author | Shiben Hu Kuankuan Lu Honglong Ning Rihui Yao Yanfen Gong Zhangxu Pan Chan Guo Jiantai Wang Chao Pang Zheng Gong Junbiao Peng |
| author_facet | Shiben Hu Kuankuan Lu Honglong Ning Rihui Yao Yanfen Gong Zhangxu Pan Chan Guo Jiantai Wang Chao Pang Zheng Gong Junbiao Peng |
| author_sort | Shiben Hu |
| collection | DOAJ |
| description | In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/(Ar+O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>μ</mi></semantics></math></inline-formula>-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec. |
| first_indexed | 2024-03-09T00:44:59Z |
| format | Article |
| id | doaj.art-b57bfc71ec9949679ca89538c3c746f4 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T00:44:59Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-b57bfc71ec9949679ca89538c3c746f42023-12-11T17:33:58ZengMDPI AGNanomaterials2079-49912021-02-0111252210.3390/nano11020522Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor PerformanceShiben Hu0Kuankuan Lu1Honglong Ning2Rihui Yao3Yanfen Gong4Zhangxu Pan5Chan Guo6Jiantai Wang7Chao Pang8Zheng Gong9Junbiao Peng10Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, ChinaIn this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/(Ar+O<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>μ</mi></semantics></math></inline-formula>-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.https://www.mdpi.com/2079-4991/11/2/522oxide semiconductora-IGZOTFTX-ray reflectivitymicrowave photoconductivity decay |
| spellingShingle | Shiben Hu Kuankuan Lu Honglong Ning Rihui Yao Yanfen Gong Zhangxu Pan Chan Guo Jiantai Wang Chao Pang Zheng Gong Junbiao Peng Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance Nanomaterials oxide semiconductor a-IGZO TFT X-ray reflectivity microwave photoconductivity decay |
| title | Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance |
| title_full | Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance |
| title_fullStr | Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance |
| title_full_unstemmed | Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance |
| title_short | Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance |
| title_sort | study of the correlation between the amorphous indium gallium zinc oxide film quality and the thin film transistor performance |
| topic | oxide semiconductor a-IGZO TFT X-ray reflectivity microwave photoconductivity decay |
| url | https://www.mdpi.com/2079-4991/11/2/522 |
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