Rapid wafer-scale fabrication with layer-by-layer thickness control of atomically thin MoS2 films using gas-phase chemical vapor deposition
Design and development of the growth-process for the production of wafer-scale spatially homogeneous thickness controlled atomically thin transition metal dichalcogenides (TMDs) is one of the key challenges to realize modern electronic devices. Here, we demonstrate rapid and scalable synthesis of Mo...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5095451 |