Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the...
| Hlavní autoři: | , , |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
AIP Publishing LLC
2014-04-01
|
| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/1.4871996 |