Annealing effects on recombinative activity of nickel at direct silicon bonded interface
By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence...
| Main Authors: | , , |
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| Format: | Article |
| Jezik: | English |
| Izdano: |
AIP Publishing LLC
2015-09-01
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| Serija: | AIP Advances |
| Online dostop: | http://dx.doi.org/10.1063/1.4931083 |