Annealing effects on recombinative activity of nickel at direct silicon bonded interface

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence...

Bibliografske podrobnosti
Main Authors:	Takuto Kojima, Yoshio Ohshita, Masafumi Yamaguchi
Format:	Article
Jezik:	English
Izdano:	AIP Publishing LLC 2015-09-01
Serija:	AIP Advances
Online dostop:	http://dx.doi.org/10.1063/1.4931083

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