Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0064823 |