Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD
The epitaxial lateral growth of single-crystal diamond (SCD) using a plate-to-plate microwave plasma chemical vapor deposition (MPCVD) reactor under high pressure is investigated. The radicals’ distribution in H2/CH4 plasma as a function of pressure was locally detected by optical emission spectrosc...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2022-01-01
|
| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2021.1947750 |