Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs
A number of machine learning (ML) algorithm based small signal modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature. However, these techniques rarely provide any inkling about their suitability in modeling GaN HEMTs under varied operating cond...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9963557/ |