Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency (<inline-formula> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula>) and maximum oscillation frequency (<inline-formula> &l...

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Bibliographic Details
Main Authors: Xiaodi Jin, Markus Muller, Paulius Sakalas, Anindya Mukherjee, Yaxin Zhang, Michael Schroter
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Compact modeling
cryogenic modeling
cutoff frequency
heterojunction bipolar transistor (HBT)
HIgh CUrrent Model (HICUM)
quantum computing
Online Access:https://ieeexplore.ieee.org/document/9624975/

Internet

https://ieeexplore.ieee.org/document/9624975/

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