Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub>

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub>

The exploration initiated by the discovery of the topological insulator (Bi<i><sub>x</sub></i>Sb<sub>1−<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), mar...

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Bibliographic Details
Main Authors: Pangihutan Gultom, Chia-Chieh Hsu, Min Kai Lee, Shu Hsuan Su, Jung-Chung-Andrew Huang
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
topological insulator
Cr-doped (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub>
molecule beam epitaxy (MBE) technique
carrier density
carrier mobility
Online Access:https://www.mdpi.com/2079-4991/14/2/157

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https://www.mdpi.com/2079-4991/14/2/157

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