A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition
Reported herein is the atomic layer deposition (ALD) of novel ternary ZnCo<sub>x</sub>O<sub>y</sub> films possessing p-type semiconducting behavior. The preparation comprises of optimized ZnO and Co<sub>3</sub>O<sub>4</sub> deposition in sub-cycles usi...
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| Format: | Article |
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MDPI AG
2022-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/19/3381 |
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| author | Leyi Li Zhixin Wan Quan Wen Zesheng Lv Bin Xi |
| author_facet | Leyi Li Zhixin Wan Quan Wen Zesheng Lv Bin Xi |
| author_sort | Leyi Li |
| collection | DOAJ |
| description | Reported herein is the atomic layer deposition (ALD) of novel ternary ZnCo<sub>x</sub>O<sub>y</sub> films possessing p-type semiconducting behavior. The preparation comprises of optimized ZnO and Co<sub>3</sub>O<sub>4</sub> deposition in sub-cycles using the commercially available precursors cyclopentadienylcobalt dicarbonyl (CpCo(CO)<sub>2</sub>), diethylzinc (DEZ) and ozone (O<sub>3</sub>). A systematic exploration of the film’s microstructure, crystallinity, optical properties and electrical properties was conducted and revealed an association with Zn/Co stoichiometry. The noteworthy results include the following: (1) by adjusting the sub-cycle of ZnO/ Co<sub>3</sub>O<sub>4</sub> to 1/10, a spinel structured ZnCo<sub>x</sub>O<sub>y</sub> film was grown at 150 °C, with it exhibiting a smooth surface, good crystallinity and high purity; (2) the material transmittance and bandgap decreased as the Co element concentration increased; (3) the ZnCo<sub>x</sub>O<sub>y</sub> film is more stable than its p-type analog Co<sub>3</sub>O<sub>4</sub> film; and (4) upon p-n diode fabrication, the ZnCo<sub>x</sub>O<sub>y</sub> film demonstrated good rectification behaviors as well as very low and stable reverse leakage in forward and reverse-biased voltages, respectively. Its application in thin film transistors and flexible or transparent semiconductor devices is highly suggested. |
| first_indexed | 2024-03-09T21:22:01Z |
| format | Article |
| id | doaj.art-b65d5806414e4f0f8f89829bb3477051 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:22:01Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-b65d5806414e4f0f8f89829bb34770512023-11-23T21:19:09ZengMDPI AGNanomaterials2079-49912022-09-011219338110.3390/nano12193381A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer DepositionLeyi Li0Zhixin Wan1Quan Wen2Zesheng Lv3Bin Xi4School of Materials Science and Engineering, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, PFCM Lab, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Materials Science and Engineering, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, PFCM Lab, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Materials Science and Engineering, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, PFCM Lab, Sun Yat-sen University, Guangzhou 510006, ChinaReported herein is the atomic layer deposition (ALD) of novel ternary ZnCo<sub>x</sub>O<sub>y</sub> films possessing p-type semiconducting behavior. The preparation comprises of optimized ZnO and Co<sub>3</sub>O<sub>4</sub> deposition in sub-cycles using the commercially available precursors cyclopentadienylcobalt dicarbonyl (CpCo(CO)<sub>2</sub>), diethylzinc (DEZ) and ozone (O<sub>3</sub>). A systematic exploration of the film’s microstructure, crystallinity, optical properties and electrical properties was conducted and revealed an association with Zn/Co stoichiometry. The noteworthy results include the following: (1) by adjusting the sub-cycle of ZnO/ Co<sub>3</sub>O<sub>4</sub> to 1/10, a spinel structured ZnCo<sub>x</sub>O<sub>y</sub> film was grown at 150 °C, with it exhibiting a smooth surface, good crystallinity and high purity; (2) the material transmittance and bandgap decreased as the Co element concentration increased; (3) the ZnCo<sub>x</sub>O<sub>y</sub> film is more stable than its p-type analog Co<sub>3</sub>O<sub>4</sub> film; and (4) upon p-n diode fabrication, the ZnCo<sub>x</sub>O<sub>y</sub> film demonstrated good rectification behaviors as well as very low and stable reverse leakage in forward and reverse-biased voltages, respectively. Its application in thin film transistors and flexible or transparent semiconductor devices is highly suggested.https://www.mdpi.com/2079-4991/12/19/3381atomic layer deposition (ALD)ZnCo<sub>x</sub>O<sub>y</sub> filmp-type metal oxides |
| spellingShingle | Leyi Li Zhixin Wan Quan Wen Zesheng Lv Bin Xi A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition Nanomaterials atomic layer deposition (ALD) ZnCo<sub>x</sub>O<sub>y</sub> film p-type metal oxides |
| title | A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition |
| title_full | A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition |
| title_fullStr | A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition |
| title_full_unstemmed | A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition |
| title_short | A Novel p-Type ZnCo<sub>x</sub>O<sub>y</sub> Thin Film Grown by Atomic Layer Deposition |
| title_sort | novel p type znco sub x sub o sub y sub thin film grown by atomic layer deposition |
| topic | atomic layer deposition (ALD) ZnCo<sub>x</sub>O<sub>y</sub> film p-type metal oxides |
| url | https://www.mdpi.com/2079-4991/12/19/3381 |
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