Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent c...

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Detaylı Bibliyografya
Asıl Yazarlar: Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: Wiley 2024-09-01
Seri Bilgileri:Electronics Letters
Konular:
semiconductor counters
radiation detection
wide band gap semiconductors
Online Erişim:https://doi.org/10.1049/ell2.70007

Internet

https://doi.org/10.1049/ell2.70007

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