Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent c...
Main Authors: | , , , , |
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Formato: | Artigo |
Idioma: | English |
Publicado em: |
Wiley
2024-09-01
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Colecção: | Electronics Letters |
Assuntos: | |
Acesso em linha: | https://doi.org/10.1049/ell2.70007 |