Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent c...

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Detalhes bibliográficos
Main Authors: Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal
Formato: Artigo
Idioma:English
Publicado em: Wiley 2024-09-01
Colecção:Electronics Letters
Assuntos:
Acesso em linha:https://doi.org/10.1049/ell2.70007