Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 °C. Obtained data were fitted by onl...

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Bibliographic Details
Main Authors: Martin Florovič, Jaroslava Škriniarová, Jaroslav Kováč, Peter Kordoš
Format: Article
Language:English
Published: MDPI AG 2016-05-01
Series:Electronics
Subjects:
AlGaN/GaN
Schottky diode
exponential function
(de)trapping
activation energy
Online Access:http://www.mdpi.com/2079-9292/5/2/20

Internet

http://www.mdpi.com/2079-9292/5/2/20

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