Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped <i>n++</i>-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs o...

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Bibliographic Details
Main Authors: Ye Tian, Peng Feng, Chenqi Zhu, Xinchi Chen, Ce Xu, Volkan Esendag, Guillem Martinez de Arriba, Tao Wang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Materials
Subjects:
AlGaN/GaN
distributed Bragg reflector
electrochemical etching
nanoporous structure
Online Access:https://www.mdpi.com/1996-1944/15/10/3536

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https://www.mdpi.com/1996-1944/15/10/3536

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