4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array

4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array

To apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of the RRAM cell and enable gradual switching ch...

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Bibliographic Details
Main Authors: Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim
Format: Article
Language:English
Published: Wiley 2022-09-01
Series:Advanced Intelligent Systems
Subjects:
crossbar arrays
memristor
multilevel operation
overshoot current suppression
tuning
Online Access:https://doi.org/10.1002/aisy.202100273

Internet

https://doi.org/10.1002/aisy.202100273

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