4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array
To apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of the RRAM cell and enable gradual switching ch...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-09-01
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| Series: | Advanced Intelligent Systems |
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| Online Access: | https://doi.org/10.1002/aisy.202100273 |
| _version_ | 1798000606988730368 |
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| author | Sungjoon Kim Jinwoo Park Tae-Hyeon Kim Kyungho Hong Yeongjin Hwang Byung-Gook Park Hyungjin Kim |
| author_facet | Sungjoon Kim Jinwoo Park Tae-Hyeon Kim Kyungho Hong Yeongjin Hwang Byung-Gook Park Hyungjin Kim |
| author_sort | Sungjoon Kim |
| collection | DOAJ |
| description | To apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of the RRAM cell and enable gradual switching characteristics to mimic the low‐energy operations of biological. In most filamentary RRAMs, however, overshoot current occurs in the forming stage, and the RRAM shows large device variation, high operating current, and abrupt set and reset switching characteristics. Herein, the shortcomings occurring in the forming stage are overcome by introducing and optimizing an overshoot suppression layer. Consequently, the RRAM exhibits gradual switching characteristics both in the set and reset regions, thereby enabling implementation of 4‐bit multilevel operation. In addition, the forming step can be easily performed in a 16 × 16 crossbar array owing to its self‐compliance characteristics without disturbing neighboring cells in the array. The tuning and vector–matrix multiplication (VMM) operations are also experimentally verified in the array. Finally, classification performance with off‐chip training is compared in terms of accuracy and robustness to tuning tolerance depending on the number of bits of the implemented multiconductance levels. |
| first_indexed | 2024-04-11T11:23:01Z |
| format | Article |
| id | doaj.art-b6b0e24b81814ab6a59291c8f58cef04 |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-04-11T11:23:01Z |
| publishDate | 2022-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-b6b0e24b81814ab6a59291c8f58cef042022-12-22T04:26:35ZengWileyAdvanced Intelligent Systems2640-45672022-09-0149n/an/a10.1002/aisy.2021002734‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar ArraySungjoon Kim0Jinwoo Park1Tae-Hyeon Kim2Kyungho Hong3Yeongjin Hwang4Byung-Gook Park5Hyungjin Kim6Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering Seoul National University Seoul 08826 KoreaDepartment of Electronic Engineering Inha University Incheon 22212 KoreaInter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering Seoul National University Seoul 08826 KoreaInter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering Seoul National University Seoul 08826 KoreaDepartment of Electronic Engineering Inha University Incheon 22212 KoreaInter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering Seoul National University Seoul 08826 KoreaDepartment of Electronic Engineering Inha University Incheon 22212 KoreaTo apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of the RRAM cell and enable gradual switching characteristics to mimic the low‐energy operations of biological. In most filamentary RRAMs, however, overshoot current occurs in the forming stage, and the RRAM shows large device variation, high operating current, and abrupt set and reset switching characteristics. Herein, the shortcomings occurring in the forming stage are overcome by introducing and optimizing an overshoot suppression layer. Consequently, the RRAM exhibits gradual switching characteristics both in the set and reset regions, thereby enabling implementation of 4‐bit multilevel operation. In addition, the forming step can be easily performed in a 16 × 16 crossbar array owing to its self‐compliance characteristics without disturbing neighboring cells in the array. The tuning and vector–matrix multiplication (VMM) operations are also experimentally verified in the array. Finally, classification performance with off‐chip training is compared in terms of accuracy and robustness to tuning tolerance depending on the number of bits of the implemented multiconductance levels.https://doi.org/10.1002/aisy.202100273crossbar arraysmemristormultilevel operationovershoot current suppressiontuning |
| spellingShingle | Sungjoon Kim Jinwoo Park Tae-Hyeon Kim Kyungho Hong Yeongjin Hwang Byung-Gook Park Hyungjin Kim 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array Advanced Intelligent Systems crossbar arrays memristor multilevel operation overshoot current suppression tuning |
| title | 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array |
| title_full | 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array |
| title_fullStr | 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array |
| title_full_unstemmed | 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array |
| title_short | 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array |
| title_sort | 4 bit multilevel operation in overshoot suppressed al2o3 tiox resistive random access memory crossbar array |
| topic | crossbar arrays memristor multilevel operation overshoot current suppression tuning |
| url | https://doi.org/10.1002/aisy.202100273 |
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