Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system

The transition from a semiconductor to a fast-ion conductor with increasing silver content along the Agx(Ge0.25Se0.75)(100−x) tie line (0≤x≤25) was investigated on multiple length scales by employing a combination of electric force microscopy, X-ray diffraction, and neutron diffraction. The microsco...

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Main Authors: Anita Zeidler, Philip S. Salmon, Dean A. J. Whittaker, Andrea Piarristeguy, Annie Pradel, Henry E. Fischer, Chris J. Benmore, Ozgur Gulbiten
Format: Article
Language:English
Published: The Royal Society 2018-01-01
Series:Royal Society Open Science
Subjects:
Online Access:https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.171401
_version_ 1828900929720549376
author Anita Zeidler
Philip S. Salmon
Dean A. J. Whittaker
Andrea Piarristeguy
Annie Pradel
Henry E. Fischer
Chris J. Benmore
Ozgur Gulbiten
author_facet Anita Zeidler
Philip S. Salmon
Dean A. J. Whittaker
Andrea Piarristeguy
Annie Pradel
Henry E. Fischer
Chris J. Benmore
Ozgur Gulbiten
author_sort Anita Zeidler
collection DOAJ
description The transition from a semiconductor to a fast-ion conductor with increasing silver content along the Agx(Ge0.25Se0.75)(100−x) tie line (0≤x≤25) was investigated on multiple length scales by employing a combination of electric force microscopy, X-ray diffraction, and neutron diffraction. The microscopy results show separation into silver-rich and silver-poor phases, where the Ag-rich phase percolates at the onset of fast-ion conductivity. The method of neutron diffraction with Ag isotope substitution was applied to the x=5 and x=25 compositions, and the results indicate an evolution in structure of the Ag-rich phase with change of composition. The Ag–Se nearest-neighbours are distributed about a distance of 2.64(1) Å, and the Ag–Se coordination number increases from 2.6(3) at x=5 to 3.3(2) at x=25. For x=25, the measured Ag–Ag partial pair-distribution function gives 1.9(2) Ag–Ag nearest-neighbours at a distance of 3.02(2) Å. The results show breakage of Se–Se homopolar bonds as silver is added to the Ge0.25Se0.75 base glass, and the limit of glass-formation at x≃28 coincides with an elimination of these bonds. A model is proposed for tracking the breakage of Se–Se homopolar bonds as silver is added to the base glass.
first_indexed 2024-12-13T15:53:26Z
format Article
id doaj.art-b6bcadf653b8425a9a8e65a7646b5121
institution Directory Open Access Journal
issn 2054-5703
language English
last_indexed 2024-12-13T15:53:26Z
publishDate 2018-01-01
publisher The Royal Society
record_format Article
series Royal Society Open Science
spelling doaj.art-b6bcadf653b8425a9a8e65a7646b51212022-12-21T23:39:23ZengThe Royal SocietyRoyal Society Open Science2054-57032018-01-015110.1098/rsos.171401171401Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se systemAnita ZeidlerPhilip S. SalmonDean A. J. WhittakerAndrea PiarristeguyAnnie PradelHenry E. FischerChris J. BenmoreOzgur GulbitenThe transition from a semiconductor to a fast-ion conductor with increasing silver content along the Agx(Ge0.25Se0.75)(100−x) tie line (0≤x≤25) was investigated on multiple length scales by employing a combination of electric force microscopy, X-ray diffraction, and neutron diffraction. The microscopy results show separation into silver-rich and silver-poor phases, where the Ag-rich phase percolates at the onset of fast-ion conductivity. The method of neutron diffraction with Ag isotope substitution was applied to the x=5 and x=25 compositions, and the results indicate an evolution in structure of the Ag-rich phase with change of composition. The Ag–Se nearest-neighbours are distributed about a distance of 2.64(1) Å, and the Ag–Se coordination number increases from 2.6(3) at x=5 to 3.3(2) at x=25. For x=25, the measured Ag–Ag partial pair-distribution function gives 1.9(2) Ag–Ag nearest-neighbours at a distance of 3.02(2) Å. The results show breakage of Se–Se homopolar bonds as silver is added to the Ge0.25Se0.75 base glass, and the limit of glass-formation at x≃28 coincides with an elimination of these bonds. A model is proposed for tracking the breakage of Se–Se homopolar bonds as silver is added to the base glass.https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.171401glass structurephase separationsuper-ionic phasepercolation transitionelectric force microscopyneutron and x-ray diffraction
spellingShingle Anita Zeidler
Philip S. Salmon
Dean A. J. Whittaker
Andrea Piarristeguy
Annie Pradel
Henry E. Fischer
Chris J. Benmore
Ozgur Gulbiten
Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
Royal Society Open Science
glass structure
phase separation
super-ionic phase
percolation transition
electric force microscopy
neutron and x-ray diffraction
title Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
title_full Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
title_fullStr Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
title_full_unstemmed Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
title_short Structure of semiconducting versus fast-ion conducting glasses in the Ag–Ge–Se system
title_sort structure of semiconducting versus fast ion conducting glasses in the ag ge se system
topic glass structure
phase separation
super-ionic phase
percolation transition
electric force microscopy
neutron and x-ray diffraction
url https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.171401
work_keys_str_mv AT anitazeidler structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT philipssalmon structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT deanajwhittaker structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT andreapiarristeguy structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT anniepradel structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT henryefischer structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT chrisjbenmore structureofsemiconductingversusfastionconductingglassesintheaggesesystem
AT ozgurgulbiten structureofsemiconductingversusfastionconductingglassesintheaggesesystem