Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions
Abstract The increasing demand for data movement and energy consumption in physically separate von Neumann architectures, where the processor and memory are distinct entities, highlights the severity of the memory‐wall problem. Thus, memristor‐based logic‐in‐memory (LiM) has garnered significant int...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300618 |