X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3. For diffusion into silicon, Ga and Sb impurities wer...

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Bibliographic Details
Main Authors: Xalmurat M. Iliyev, Vladimir B. Odzhaev, Sobir B. Isamov, Bobir O. Isakov, Bayrambay K. Ismaylov, Kutub S. Ayupov, Shahzodbek I. Hamrokulov, Sarvinoz O. Khasanbaeva
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2023-09-01
Series:East European Journal of Physics
Subjects:
silicon
gallium
antimony
doping
diffusion
microsized islands
Online Access:https://periodicals.karazin.ua/eejp/article/view/21928

Internet

https://periodicals.karazin.ua/eejp/article/view/21928

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