X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique
The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3. For diffusion into silicon, Ga and Sb impurities wer...
Main Authors: | Xalmurat M. Iliyev, Vladimir B. Odzhaev, Sobir B. Isamov, Bobir O. Isakov, Bayrambay K. Ismaylov, Kutub S. Ayupov, Shahzodbek I. Hamrokulov, Sarvinoz O. Khasanbaeva |
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Format: | Article |
Language: | English |
Published: |
V.N. Karazin Kharkiv National University Publishing
2023-09-01
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Series: | East European Journal of Physics |
Subjects: | |
Online Access: | https://periodicals.karazin.ua/eejp/article/view/21928 |
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