High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

In this work, we propose the lateral metal-germanium-metal photodetectors (PDs) structure on the silicon-on-insulator platform for short-wave infrared (SWIR) applications. The proposed device utilizes the highly <italic>n</italic>-doped amorphous silicon (a-Si:H) interlayer between metal...

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Bibliographic Details
Main Authors: Harshvardhan Kumar, Chu-Hsuan Lin
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
High-performance
high detectivity
high sensitivity
low dark current
photodetectors
short-wave infrared
Online Access:https://ieeexplore.ieee.org/document/10016715/

Internet

https://ieeexplore.ieee.org/document/10016715/

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