Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon

Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon

Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechani...

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Bibliographic Details
Main Authors: Guixia Yang, Kunlin Wu, Jianyong Liu, Dehui Zou, Junjie Li, Yi Lu, Xueyang Lv, Jiayun Xu, Liang Qiao, Xuqiang Liu
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Nanomaterials
Subjects:
enhanced low-neutron-flux sensitivity effect
noise power spectral density
carrier removal rate
remaining vacancy-related defect
collector-emitter leakage current
Online Access:https://www.mdpi.com/2079-4991/10/5/886

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https://www.mdpi.com/2079-4991/10/5/886

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