Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices. The conventional underlap-FinFETs offer lower on current (I<sub>on</sub>) and higher distributed channel...

Full description

Bibliographic Details
Main Authors: Sayani Ghosh, Kalyan Koley, Samar K. Saha, Chandan K. Sarkar
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Underlap-FinFET
Gate Height
NQS
Intrinsic Parameter
Common Source Amplifier
Online Access:https://ieeexplore.ieee.org/document/7113783/

Internet

https://ieeexplore.ieee.org/document/7113783/

Similar Items