Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering

Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering

Photogeneration of excess charge carriers in semiconductors produces electronic strain. Under transient conditions, electron-hole pairs may be separated across a potential barrier. Using time-resolved X-ray diffraction measurements across an intrinsic AlGaAs/n-doped GaAs interface, we find that the...

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Bibliographic Details
Main Authors: Sooheyong Lee, Wonhyuk Jo, Anthony D. DiChiara, Timothy P. Holmes, Stephen Santowski, Yong Chan Cho, Eric C. Landahl
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Applied Sciences
Subjects:
deformation potential
electronic strain
gallium arsenide
time-resolved x-ray scattering
thermal transport
Online Access:https://www.mdpi.com/2076-3417/9/22/4788

Internet

https://www.mdpi.com/2076-3417/9/22/4788

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