Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such f...

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Bibliographic Details
Main Authors: Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
HfO2 thin films
Atomic layer deposition
O2 plasma pretreatment
Surface passivation
Online Access:http://link.springer.com/article/10.1186/s11671-017-2098-5

Internet

http://link.springer.com/article/10.1186/s11671-017-2098-5

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