Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Abstract Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further application. Here, we demonstrate PCM based on In0.9Ge2S...

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Bibliographic Details
Main Authors: Ruobing Wang, Zhitang Song, Wenxiong Song, Tianjiao Xin, Shilong Lv, Sannian Song, Jun Liu
Format: Article
Language:English
Published: Wiley 2021-09-01
Series:InfoMat
Subjects:
improved performances
matched octahedrons
phase‐change memory
robust thermal stability
Online Access:https://doi.org/10.1002/inf2.12233

Internet

https://doi.org/10.1002/inf2.12233

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