Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress
In this work, an anomalous thick oxide-degradation phenomenon in n-type 650-V class super-junction VDMOS transistors is investigated. An unexpected threshold voltage (V<sub>t</sub>) decrease was observed with high positive bias temperature instability stress, and the saturation current (...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/9/1362 |