Intercalation of Si between MoS2 layers
We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Beilstein-Institut
2017-09-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.8.196 |