Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors
It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted fi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2007-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2007/6_2007/pdf/01.zip |