Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors
It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted fi...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2007-12-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2007/6_2007/pdf/01.zip |
| _version_ | 1818964936773074944 |
|---|---|
| author | Gorev N. B. Kodzhespirova I. F. Privalov E. N. |
| author_facet | Gorev N. B. Kodzhespirova I. F. Privalov E. N. |
| author_sort | Gorev N. B. |
| collection | DOAJ |
| description | It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance-voltage measurements prior to contact formation is proposed. |
| first_indexed | 2024-12-20T13:09:02Z |
| format | Article |
| id | doaj.art-b797d1c97ad64f2d8f44c0e7c5793b5d |
| institution | Directory Open Access Journal |
| issn | 2225-5818 |
| language | English |
| last_indexed | 2024-12-20T13:09:02Z |
| publishDate | 2007-12-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-b797d1c97ad64f2d8f44c0e7c5793b5d2022-12-21T19:39:42ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182007-12-01635Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistorsGorev N. B.Kodzhespirova I. F.Privalov E. N.It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance-voltage measurements prior to contact formation is proposed.http://www.tkea.com.ua/tkea/2007/6_2007/pdf/01.zipgallium arsenidefield-effect transistorSchottky barrierthreshold voltagecapacitance-voltage characteristic |
| spellingShingle | Gorev N. B. Kodzhespirova I. F. Privalov E. N. Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors Tekhnologiya i Konstruirovanie v Elektronnoi Apparature gallium arsenide field-effect transistor Schottky barrier threshold voltage capacitance-voltage characteristic |
| title | Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors |
| title_full | Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors |
| title_fullStr | Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors |
| title_full_unstemmed | Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors |
| title_short | Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors |
| title_sort | prediction of the threshold voltage of gaas ion implanted metal semiconductor field effect transistors |
| topic | gallium arsenide field-effect transistor Schottky barrier threshold voltage capacitance-voltage characteristic |
| url | http://www.tkea.com.ua/tkea/2007/6_2007/pdf/01.zip |
| work_keys_str_mv | AT gorevnb predictionofthethresholdvoltageofgaasionimplantedmetalsemiconductorfieldeffecttransistors AT kodzhespirovaif predictionofthethresholdvoltageofgaasionimplantedmetalsemiconductorfieldeffecttransistors AT privaloven predictionofthethresholdvoltageofgaasionimplantedmetalsemiconductorfieldeffecttransistors |