AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate
This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity (resistivity~ 20–100 <inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>-cm) silico...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9286477/ |