Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Abstract The hardware implementation of artificial neural networks requires synaptic devices with linear and high‐speed weight modulation. Memristors as a candidate suffer from excessive write variation and asymmetric resistance modulation that inherently rooted in their stochastic mechanisms. Thank...

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Bibliographic Details
Main Authors: Han Xu, Renrui Fang, Shuyu Wu, Junjie An, Woyu Zhang, Chao Li, Jikai Lu, Yue Li, Xiaoxin Xu, Yan Wang, Qi Liu, Dashan Shang
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Electronic Materials
Subjects:
artificial synapses
electrolyte‐gated transistors
electrolyte/gate interface
write‐read delay
Online Access:https://doi.org/10.1002/aelm.202200915

Internet

https://doi.org/10.1002/aelm.202200915

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