Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield☆
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline to show the limitations in making a trench gated d...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123001134 |