Strain-engineered inverse charge-funnelling in layered semiconductors
The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-04099-7 |