Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al<sub>2</sub>O<sub>3</sub> Passivation Layer

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al<sub>2</sub>O<sub>3</sub> Passivation Layer

Diamonds are thought to be excellent candidates of next-generation semiconductor materials for high power and high frequency devices. A two-dimensional hole gas in a hydrogen-terminated diamond shows promising properties for microwave power devices. However, high sheet resistance and low carrier mob...

Full description

Bibliographic Details
Main Authors: Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Mengyu Ma, Hongxing Wang, Aimin Bu, Zhihong Feng
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Crystals
Subjects:
diamond
carrier mobility
two-dimensional hole gas
carrier scattering mechanisms
Online Access:https://www.mdpi.com/2073-4352/12/3/390

Internet

https://www.mdpi.com/2073-4352/12/3/390

Similar Items