Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the gate region of the AlGaN/GaN HEMT was defined by u...

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Bibliographic Details
Main Authors: Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
5G
high uniformity
output power
stepper lithography
small gate length
Online Access:https://ieeexplore.ieee.org/document/10129122/

Internet

https://ieeexplore.ieee.org/document/10129122/

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