Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate
Nanotube (NT) FETs have been proposed as the most promising architecture for the ultimate scaling of FETs. However, an enhanced L-BTBT restricts their scaling. Therefore, in this paper, for the first time, we explore the application of a dual-material gate (DMG) in the emerging NT junctionless accum...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8345670/ |