Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate

Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate

Nanotube (NT) FETs have been proposed as the most promising architecture for the ultimate scaling of FETs. However, an enhanced L-BTBT restricts their scaling. Therefore, in this paper, for the first time, we explore the application of a dual-material gate (DMG) in the emerging NT junctionless accum...

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Bibliographic Details
Main Authors:	Aakash Kumar Jain, Shubham Sahay, Mamidala Jagadesh Kumar
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Band-to-band tunneling (BTBT) gate induced drain leakage (GIDL) nanotube FET (NTFET) junctionless accumulation mode FET (JAMFET) metal-oxide semiconductor FET (MOSFET)
Online Access:	https://ieeexplore.ieee.org/document/8345670/

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