Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper)

Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper)

Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to the low resistivity in the silicon substrate and thus can improve the efficiency of vertical signal transmission. Moreover, a TSV-based coaxial structure allows easily realizing the impedance matching i...

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Bibliographic Details
Main Authors: Zhibo Zhao, Jinkai Li, Haoyun Yuan, Zeyu Wang, Giovanni Gugliandolo, Nicola Donato, Giovanni Crupi, Liming Si, Xiue Bao
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Electronics
Subjects:
characteristic impedance
coaxial-like TSV
conformal mapping
finite element method (FEM)
microwave devices
Online Access:https://www.mdpi.com/2079-9292/11/20/3417

Internet

https://www.mdpi.com/2079-9292/11/20/3417

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