Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper)
Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to the low resistivity in the silicon substrate and thus can improve the efficiency of vertical signal transmission. Moreover, a TSV-based coaxial structure allows easily realizing the impedance matching i...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/20/3417 |
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| author | Zhibo Zhao Jinkai Li Haoyun Yuan Zeyu Wang Giovanni Gugliandolo Nicola Donato Giovanni Crupi Liming Si Xiue Bao |
| author_facet | Zhibo Zhao Jinkai Li Haoyun Yuan Zeyu Wang Giovanni Gugliandolo Nicola Donato Giovanni Crupi Liming Si Xiue Bao |
| author_sort | Zhibo Zhao |
| collection | DOAJ |
| description | Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to the low resistivity in the silicon substrate and thus can improve the efficiency of vertical signal transmission. Moreover, a TSV-based coaxial structure allows easily realizing the impedance matching in RF/microwave systems for excellent electrical performance. However, due to the limitations of existing available dielectric materials and the difficulties and challenges in the manufacturing process, ideal coaxial TSVs are not easy to obtain, and thus, the achieved electrical performance might be unexpected. In order to increase the flexibility of designing and manufacturing TSV-based coaxial structures and to better evaluate the fabricated devices, modeling and analysis theories of the corresponding high-frequency electrical performance are proposed in the paper. The theories are finally well validated using the finite-element simulation results, hereby providing guiding rules for selecting materials and improving manufacturing techniques in the practical process, so as to optimize the high-frequency performance of the TSV structures. |
| first_indexed | 2024-03-09T20:18:42Z |
| format | Article |
| id | doaj.art-b81956143bcb44239267cfc4ce8a684d |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T20:18:42Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-b81956143bcb44239267cfc4ce8a684d2023-11-23T23:54:47ZengMDPI AGElectronics2079-92922022-10-011120341710.3390/electronics11203417Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper)Zhibo Zhao0Jinkai Li1Haoyun Yuan2Zeyu Wang3Giovanni Gugliandolo4Nicola Donato5Giovanni Crupi6Liming Si7Xiue Bao8School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, ChinaTangshan Research Institute of BIT, Tangshan 063000, ChinaSchool of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, ChinaTangshan Research Institute of BIT, Tangshan 063000, ChinaEngineering Department, University of Messina, 98166 Messina, ItalyEngineering Department, University of Messina, 98166 Messina, ItalyBIOMORF Department, University of Messina, 98125 Messina, ItalySchool of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, ChinaThrough-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to the low resistivity in the silicon substrate and thus can improve the efficiency of vertical signal transmission. Moreover, a TSV-based coaxial structure allows easily realizing the impedance matching in RF/microwave systems for excellent electrical performance. However, due to the limitations of existing available dielectric materials and the difficulties and challenges in the manufacturing process, ideal coaxial TSVs are not easy to obtain, and thus, the achieved electrical performance might be unexpected. In order to increase the flexibility of designing and manufacturing TSV-based coaxial structures and to better evaluate the fabricated devices, modeling and analysis theories of the corresponding high-frequency electrical performance are proposed in the paper. The theories are finally well validated using the finite-element simulation results, hereby providing guiding rules for selecting materials and improving manufacturing techniques in the practical process, so as to optimize the high-frequency performance of the TSV structures.https://www.mdpi.com/2079-9292/11/20/3417characteristic impedancecoaxial-like TSVconformal mappingfinite element method (FEM)microwave devices |
| spellingShingle | Zhibo Zhao Jinkai Li Haoyun Yuan Zeyu Wang Giovanni Gugliandolo Nicola Donato Giovanni Crupi Liming Si Xiue Bao Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) Electronics characteristic impedance coaxial-like TSV conformal mapping finite element method (FEM) microwave devices |
| title | Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) |
| title_full | Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) |
| title_fullStr | Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) |
| title_full_unstemmed | Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) |
| title_short | Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (Invited Paper) |
| title_sort | electrical characterization of through silicon via based coaxial line for high frequency 3d integration invited paper |
| topic | characteristic impedance coaxial-like TSV conformal mapping finite element method (FEM) microwave devices |
| url | https://www.mdpi.com/2079-9292/11/20/3417 |
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