Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method
Floating particles often appear during the Czochralski (CZ) growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> in the Ir crucible, thereby impeding the seeding process. Identifying the floating nanoparticles and then inhibiting or removing them is critical for growing...
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MDPI AG
2022-07-01
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| Series: | Metals |
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| Online Access: | https://www.mdpi.com/2075-4701/12/7/1171 |
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| author | Yingying Liu Xiangwei Guo Ning Xia Zijian Hong Hui Zhang Deren Yang |
| author_facet | Yingying Liu Xiangwei Guo Ning Xia Zijian Hong Hui Zhang Deren Yang |
| author_sort | Yingying Liu |
| collection | DOAJ |
| description | Floating particles often appear during the Czochralski (CZ) growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> in the Ir crucible, thereby impeding the seeding process. Identifying the floating nanoparticles and then inhibiting or removing them is critical for growing high-quality <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystals. We grew <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> crystals containing floating particles using the CZ method. It is indicated that the floating particles were composed of Ir with a face-centered cubic (<i>fcc</i>) structure. In addition, the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>/Ir interface was comprehensively characterized, showing sharp and straight configuration on the whole with small fluctuations at the nanoscale. Combined with density functional theory (DFT) calculation, we found that Ir-O bonding was responsible for stabilizing the interface. Accordingly, the atomic configuration of the interface with the stablest structure, including the relaxed one, was determined. Based on the formation mechanism of the floating particles, we propose three effective strategies, including blowing sufficient oxygen into the bottom of the Ir crucible, coating a protective layer on its inwall and equipping a mechanical arm for inhibiting or removing them. |
| first_indexed | 2024-03-09T06:13:00Z |
| format | Article |
| id | doaj.art-b8383834ab8c4c288cc445cebb11484c |
| institution | Directory Open Access Journal |
| issn | 2075-4701 |
| language | English |
| last_indexed | 2024-03-09T06:13:00Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Metals |
| spelling | doaj.art-b8383834ab8c4c288cc445cebb11484c2023-12-03T11:56:31ZengMDPI AGMetals2075-47012022-07-01127117110.3390/met12071171Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski MethodYingying Liu0Xiangwei Guo1Ning Xia2Zijian Hong3Hui Zhang4Deren Yang5State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaZhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, ChinaLaboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaFloating particles often appear during the Czochralski (CZ) growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> in the Ir crucible, thereby impeding the seeding process. Identifying the floating nanoparticles and then inhibiting or removing them is critical for growing high-quality <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystals. We grew <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> crystals containing floating particles using the CZ method. It is indicated that the floating particles were composed of Ir with a face-centered cubic (<i>fcc</i>) structure. In addition, the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>/Ir interface was comprehensively characterized, showing sharp and straight configuration on the whole with small fluctuations at the nanoscale. Combined with density functional theory (DFT) calculation, we found that Ir-O bonding was responsible for stabilizing the interface. Accordingly, the atomic configuration of the interface with the stablest structure, including the relaxed one, was determined. Based on the formation mechanism of the floating particles, we propose three effective strategies, including blowing sufficient oxygen into the bottom of the Ir crucible, coating a protective layer on its inwall and equipping a mechanical arm for inhibiting or removing them.https://www.mdpi.com/2075-4701/12/7/1171floating particlesGa<sub>2</sub>O<sub>3</sub> single crystalsCzochralski methodIr |
| spellingShingle | Yingying Liu Xiangwei Guo Ning Xia Zijian Hong Hui Zhang Deren Yang Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method Metals floating particles Ga<sub>2</sub>O<sub>3</sub> single crystals Czochralski method Ir |
| title | Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method |
| title_full | Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method |
| title_fullStr | Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method |
| title_full_unstemmed | Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method |
| title_short | Floating Particles in the Melt during the Growth of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Using the Czochralski Method |
| title_sort | floating particles in the melt during the growth of i β i ga sub 2 sub o sub 3 sub single crystals using the czochralski method |
| topic | floating particles Ga<sub>2</sub>O<sub>3</sub> single crystals Czochralski method Ir |
| url | https://www.mdpi.com/2075-4701/12/7/1171 |
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