Solid-state memory of ferroelectric tunnel junctions based on distorted ReS2

Solid-state memory of ferroelectric tunnel junctions based on distorted ReS2

Ferroelectric with quantum-mechanical tunnel allows non-volatile resistance states and fast readout of the tunnel current in the ferroelectric tunnel junctions (FTJs) through the influence of ferroic orders. However, the complex interfacial effect between electrodes and traditional ferroelectric fil...

Full description

Bibliographic Details
Main Authors: Jiajing Kuai, Weiwei Zhang, Shuyi Wu, Jingye Sheng, Xinli Cheng, Hongmin Mao, Yang Li, Jinlei Zhang, Chunlan Ma
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
non-volatile memory
out-of-plane ferroelectricity
layered ReS2
flexible ferroelectric tunneling junction
Online Access:https://doi.org/10.1088/2053-1591/abf76e

Internet

https://doi.org/10.1088/2053-1591/abf76e

Similar Items